Stanford Root

Schedule

Stanford Root

Schedule

EE 212

Integrated Circuit Fabrication Processes

UNITS:3
GRADING:Letter or Credit/No Credit
LEVEL:Graduate
GER:—

For students interested in the physical bases and practical methods of silicon VLSI chip fabrication, or the impact of technology on device and circuit design, or intending to pursue doctoral research involving the use of Stanford's Nanofabrication laboratory. Process simulators illustrate concepts. Topics: principles of integrated circuit fabrication processes, physical and chemical models for crystal growth, oxidation, ion implantation, etching, deposition, lithography, and back-end processing. Required for EE 410.

Syllabus for selected term:
View Autumn 2026 Syllabus

Sections

1 Term
Lecture 1Open
ID: 1890
0 / 70 enrolled
DAYS:Tuesday, Thursday
TIME:12 PM – 1:20 PM
LOCATION:CODAB60
INSTRUCTOR:
Plummer, Jim, Krishnan, Siddharth
3units

EE 212: Integrated Circuit Fabrication Processes

3 units · Letter or Credit/No Credit

For students interested in the physical bases and practical methods of silicon VLSI chip fabrication, or the impact of technology on device and circuit design, or intending to pursue doctoral research involving the use of Stanford's Nanofabrication laboratory. Process simulators illustrate concepts. Topics: principles of integrated circuit fabrication processes, physical and chemical models for crystal growth, oxidation, ion implantation, etching, deposition, lithography, and back-end processing. Required for 410.

Offered in Autumn 2026 at Stanford University.

Autumn 2026 sections

  • Lecture — Tuesday Thursday 12:00 PM – 1:20 PM — CODAB60 — Plummer, Jim, Krishnan, Siddharth (Graduate)

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