Stanford Root

Schedule

Stanford Root

Schedule

MATSCI 152

Electronic Materials Engineering

UNITS:4
GRADING:Letter or Credit/No Credit
LEVEL:Undergrad
GER:WAY-SMA

Materials science and engineering for electronic device applications. Kinetic molecular theory and thermally activated processes; band structure; electrical conductivity of metals and semiconductors; intrinsic and extrinsic semiconductors; elementary p-n junction theory; operating principles of light emitting diodes, solar cells, thermoelectric coolers, and transistors. Semiconductor processing including crystal growth, ion implantation, thin film deposition, etching, lithography, and nanomaterials synthesis.

Syllabus for selected term:
View Winter 2027 Syllabus

Sections

1 Term
Lecture 1Open
ID: 1987
0 / 40 enrolled
DAYS:Tuesday, Thursday
TIME:1:30 PM – 2:50 PM
LOCATION:TBD
INSTRUCTOR:
Mukherjee, Kunal
4units

MATSCI 152: Electronic Materials Engineering

4 units · Letter or Credit/No Credit · GER: WAY-SMA

Materials science and engineering for electronic device applications. Kinetic molecular theory and thermally activated processes; band structure; electrical conductivity of metals and semiconductors; intrinsic and extrinsic semiconductors; elementary p-n junction theory; operating principles of light emitting diodes, solar cells, thermoelectric coolers, and transistors. Semiconductor processing including crystal growth, ion implantation, thin film deposition, etching, lithography, and nanomaterials synthesis.

Offered in Winter 2027 at Stanford University.

Winter 2027 sections

  • Lecture — Tuesday Thursday 1:30 PM – 2:50 PM — Mukherjee, Kunal (Undergrad)

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  • MATSCI 150: Undergraduate Research
  • MATSCI 151: Microstructure and Mechanical Properties (MATSCI 251)
  • MATSCI 156: Solar Cells, Fuel Cells, and Batteries: Materials for the Energy Solution
  • MATSCI 159Q: Japanese Companies and Japanese Society (ENGR 159Q)
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