Introduction to dopants and crystal defects in semiconductors and landmark research papers in this area. Course covers point defects, dislocations, grain boundaries, interfaces etc. and how and why they impact a range of semiconductor devices such as transistors, LEDs, lasers, solar cells, and photodetectors. Emphasis on building phenomenological models of defect structure-property-processing relationships in semiconductors like silicon, GaN, and emerging defect-tolerant semiconductors. Overview of key experimental characterization techniques for defects. Key concepts from semiconductor physics and the materials science of crystal defects will be reviewed. Pre-requisites: MATSCI MATSCI 209 or EE 216 or equivalent
3 units · Letter (ABCD/NP)
Introduction to dopants and crystal defects in semiconductors and landmark research papers in this area. Course covers point defects, dislocations, grain boundaries, interfaces etc. and how and why they impact a range of semiconductor devices such as transistors, LEDs, lasers, solar cells, and photodetectors. Emphasis on building phenomenological models of defect structure-property-processing relationships in semiconductors like silicon, GaN, and emerging defect-tolerant semiconductors. Overview of key experimental characterization techniques for defects. Key concepts from semiconductor physics and the materials science of crystal defects will be reviewed. Pre-requisites: MATSCI 209 or EE216 or equivalent